2SK1254(L), 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK125.
• Low on-resistance
• High speed switching
• 4 V gate drive device Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1254(L), 2SK1254(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR P.
2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • H.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1254 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1254 |
Renesas |
Silicon N-Channel MOSFET | |
3 | 2SK1254S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1254S |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK125 |
Sony Semiconductor |
Silicon N-Channel Junction FET | |
6 | 2SK1250 |
Shindengen Electric |
VX Series Power MOSFET | |
7 | 2SK1257 |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET | |
8 | 2SK1259 |
Panasonic Semiconductor |
SILICON N-CHANNEL POWER F-MOS FET | |
9 | 2SK12 |
Toshiba |
Silicon N-Channel Transistor | |
10 | 2SK1200 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1201 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1202 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |