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The 2SK1133, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SK1133 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Directly driven by ICs having a 5 V power source. • Not necessary to consi.
• Directly driven by ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
• Can be used complementary with the 2SJ166.
ORDERING INFORMATION
PART NUMBER 2SK1133
Marking: G11
PACKAGE SC-59 (Mini Mold)
1.1 to 1.4 0.3
2.9 ±0.2 0.95 0.95
PACKAGE DRAWING (Unit: mm)
+0.1
–0.05
2.8 ±0.2 1.5
0.65
+0.1
–0.15
0.4
2
3
+0.1
–0.05
0.4
1 Marking
+0.1
–0.06
0.16
0 to 0.1
1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (V.
2SK1133 - Kexin
SMD Type ■ Features ● VDS (V) = 50V ● ID = 100 mA ● RDS(ON) ＜ 50Ω (VGS = 4V ) ● Complments the 2SJ166 N-Channel MOSFET .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK113 |
Toshiba |
Silicon N-Channel Transistor |
|
| 2 | 2SK1132 |
NEC |
N-Channel MOSFET |
|
| 3 | 2SK1134 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1135 |
Renesas Technology |
Silicon N-Channel MOS FET |
|
| 5 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor |
|
| 6 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 7 | 2SK1102-01M |
ETC |
N-CHANNEL SILICON POWER MOS-FET |
|
| 8 | 2SK1102-01MR |
ETC |
N-CHANNEL SILICON POWER MOS-FET |
|
| 9 | 2SK1103 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 10 | 2SK1104 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 11 | 2SK1105 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK1105-R |
Fuji Electric |
N-Channel Silicon Power MOSFET |
|