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2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,22Ω 8A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unl.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,22Ω 8A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS I I I V P T T D D(puls) DR GS D ch stg > Equivalent .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK108 |
Toshiba |
Silicon P-Channel FET |
|
| 2 | 2SK1081 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1081-01 |
Fuji |
N-Channel Silicon Power MOSFET |
|
| 4 | 2SK1082 |
Fuji Electric |
N-Channel Silicon Power MOS-FET |
|
| 5 | 2SK1082 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1082-01 |
Fuji Electric |
N-Channel Silicon Power MOS-FET |
|
| 7 | 2SK1083-MR |
Fuji Electric |
N-channel MOS-FET |
|
| 8 | 2SK1084 |
Fuji Semiconductors |
N-Channel MOSFET |
|
| 9 | 2SK1085-M |
Fuji Electric |
N-Channel MOSFET |
|
| 10 | 2SK1085-M |
INCHANGE |
N-Channel MOSFET |
|
| 11 | 2SK1086 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 12 | 2SK1086-MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|