2SK1017 - Inchange Semiconductor

2SK1017 N-Channel MOSFET Transistor

·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drai.

Features

ld Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 10A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Forward On-Voltage IS=20A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=20A; RL=25Ω toff Turn-off time 2SK1017 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 0.26 0.35 Ω ±100 nA 500 uA 1.25 1.88 V 200 300 ns 250 375 ns 190 290 ns 490 740 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.