2SJ649 - NEC

2SJ649 MOS FIELD EFFECT TRANSISTOR

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS .

Features

• Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =
  –10 V, ID =
  –10 A) RDS(on)2 = 75 mΩ MAX. (VGS =
  –4.0 V, ID =
  –10 A)
• Low input capacitance: Ciss = 1900 pF TYP. (VDS =
  –10 V, VGS = 0 V)
• Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
  –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2.0 150
  –55 to +150
  –20 40 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25.