2SJ550L - Hitachi Semiconductor

2SJ550L Silicon P-Channel MOSFET

2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratin.

Features

• Low on-resistance R DS(on) = 0.075 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings
  –60 ±20
  –15
  –60
  –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note.