2SJ344 - Toshiba Semiconductor

2SJ344 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8 to −2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1827 Marking Equivalent Circuit 2SJ344 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-sour.

Features

riate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshould voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ R.