2SJ333 - VBsemi

2SJ333 P-Channel 30V MOSFET

2SJ333-VB 2SJ333-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5 V ID (A)d - 38 - 25 Qg (Typ.) 19 nC TO-252 S FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch G www.VBsemi.com Ro.

Features

• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested APPLICATIONS
• Load Switch
• Notebook Adaptor Switch G www.VBsemi.com RoHS COMPLIANT GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Max.