2SJ193 - Sanyo Semicon Device

2SJ193 P-Channel MOSFET

Ordering number:EN3766 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ193] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source.

Features

· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ193] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm) Elect.