2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolute Maximum Rat.
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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings
–600 ±15 .
High speed power switching Preliminary Datasheet R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Fea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ181 |
Renesas |
Silicon P-Channel MOSFET | |
2 | 2SJ181 |
Hitachi Semiconductor |
P-Channel MOSFET | |
3 | 2SJ181 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
4 | 2SJ181S |
Renesas |
Silicon P-Channel MOSFET | |
5 | 2SJ181S |
Hitachi Semiconductor |
P-Channel MOSFET | |
6 | 2SJ180 |
NEC |
P-Channel MOSFET | |
7 | 2SJ182 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
8 | 2SJ184 |
NEC |
P-Channel MOSFET | |
9 | 2SJ185 |
NEC |
P-Channel MOSFET | |
10 | 2SJ185 |
Kexin |
P-Channel MOSFET | |
11 | 2SJ186 |
Hitachi Semiconductor |
P-Channel MOSFET | |
12 | 2SJ187 |
Sanyo Semicon Device |
P-Channel MOSFET |