2SD882H - SEMTECH

2SD882H NPN Silicon Power Transistor

ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol VCBO VCEO VEBO IC ICP Ptot Ptot Tj TS Value 60 30 5 3 7 1 10 150 - 55 to + 150 Unit V V V A A W W O Collector to Base Voltage Collec.

Features

itter Saturation Voltage at IC = 2 A, IB = 0.2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A Output Capacitance at VCB = 10 V, f = 1 MHz R Q P E SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2006 Free Datasheet http://www.datasheet4u.com/ ST 2SD882H TYPICAL CHARACTERISTICS (Ta=25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound. o DERATING CURVES FOR ALL TYPES THERMAL.