·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.
= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V tf Fall Time IC= 5A, IBend= 1A 2SD871 MIN TYP. MAX UNIT 5.0 V 5.0 V 1.5 V 10 μA 8 12 1.6 2.0 V 165 pF 3 MHz 0.5 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any ti.
2SD871 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCB0.
·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD870 |
Toshiba |
NPN Transistor | |
2 | 2SD870 |
INCHANGE |
NPN Transistor | |
3 | 2SD870 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD873 |
Toshiba |
NPN Transistor | |
5 | 2SD873 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SD874 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SD874 |
Kexin |
Silicon NPN Epitaxial Planar Type Transistors | |
8 | 2SD874-HF |
Kexin |
NPN Transistors | |
9 | 2SD874-Q |
MCC |
NPN Silicon Power Transistors | |
10 | 2SD874-R |
MCC |
NPN Silicon Power Transistors | |
11 | 2SD874-S |
MCC |
NPN Silicon Power Transistors | |
12 | 2SD874A |
AiT Components |
Transistors |