·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB P.
oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 10 5 95 2 0.9 MIN 600 5 1.2 1 10 30 9 pF MHz TYP. MAX UNIT V V V mA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT Switching times : ts tf Storage time Fall time 7 0.4 10 0.7 µs µs ICP=4A;IB1=0.8A fH =15.75kHz 2 Savant.
www.DataSheet.co.kr 2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUT.
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variation.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2490 |
INCHANGE |
NPN Transistor | |
2 | 2SD2491 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2492 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
4 | 2SD2493 |
INCHANGE |
NPN Transistor | |
5 | 2SD2493 |
Sanken electric |
Silicon NPN Transistor | |
6 | 2SD2493 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD2494 |
INCHANGE |
NPN Transistor | |
8 | 2SD2494 |
Sanken electric |
Silicon NPN Transistor | |
9 | 2SD2494 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD2495 |
Sanken electric |
Silicon NPN Transistor | |
11 | 2SD2495 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD2495 |
INCHANGE |
NPN Transistor |