Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 .
• High hFE: hFE = 100 to 400
• Low VCE(sat): VCE(sat) ≤ 0.25 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2
Tj Tstg
60 60 7.0 3.0 5.0 0.5 2.0 10 150 −55 to +150
V V V A A A W W °C °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
PAC.
2SD1899-Z - Inchange Semiconductor
·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1899-K |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1899-K |
MCC |
NPN Transistor |
|
| 3 | 2SD1899-L |
MCC |
NPN Transistor |
|
| 4 | 2SD1899-M |
MCC |
NPN Transistor |
|
| 5 | 2SD1899 |
NEC |
NPN Silicon Transistor |
|
| 6 | 2SD1899 |
Weitron |
NPN Transistor |
|
| 7 | 2SD1899 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SD1899 |
JCET |
NPN Transistor |
|
| 9 | 2SD1899 |
GME |
NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1899 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | 2SD1899L |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SD1890 |
INCHANGE |
NPN Transistor |
|