2SD1610 - Hitachi Semiconductor

2SD1610 Silicon NPN Transistor

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power d.

Features

= 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min 160 160 5 — — Typ — — — — — — — — — 140 3.8 DC current tarnsfer ratio hFE1
* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 60 30 — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Note: B 60 to 120 Cob 1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve .