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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V;ftest=1.0MHz tf Fall Time IC= 3A , IB= 0.8A, 2SD1430 MIN TYP. MAX UNIT 5 V 4.0 8.0 V 1.5 V 10 uA 0.1 mA 8 3 MHz 95 pF 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t.
2SD1430 - Toshiba Semiconductor
J SILICON NPNTRIPLE DIFFUSED MESA TYPE . 2SD1 430 COLOR TV HORIZONTAL OUTPUT APP LICATIONS. FFATTJRFS • . High Voltage.
2SD1430 - SavantIC
·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1431 |
Toshiba |
NPN Transistor |
|
| 2 | 2SD1431 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD1431 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1432 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD1432 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1432 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1433 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1433 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD1433 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1435 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1435 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1435K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|