·With TO-220Fa package ·High VCBO ·High speed switching APPLICATIONS ·Power amplifier applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1274 VCBO Collector-base voltage 2SD1274A 2SD1274B VCEO VEBO IC Collector-emitter voltage Emitter-base vol.
Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current DC current gain Transition frequency Fall time www.datasheet4u.com 2SD1274 2SD1274A 2SD1274B SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE CONDITIONS IC=0.2A, L=25mH IE=1mA, IC=0 IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=10V IC=5A ;IB1=0.8A VEB=-5V MIN 80 6 TYP. MAX UNIT V V 1.6 1.5 V V 1 mA 50 14 40 1.0 µA MHz µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD12.
Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm.
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1270 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1270 |
INCHANGE |
NPN Transistor | |
3 | 2SD1270 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1271 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SD1271 |
INCHANGE |
NPN Transistor | |
6 | 2SD1271 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD1271A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
8 | 2SD1271A |
INCHANGE |
NPN Transistor | |
9 | 2SD1271A |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1271A |
SeCoS |
NPN Transistor | |
11 | 2SD1272 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1273 |
Panasonic Semiconductor |
Silicon NPN Transistor |