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Ordering number:ENN927E www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2010C [2SB885/2SD1195] 10.2 3.6 5.1 4.5 1.3 Features · High DC current gain. · High current capaci.
· High DC current gain.
· High current capacity and wide ASO.
· Low saturation voltage.
18.0
2.7 5.6
1.2 0.8
14.0
15.1
6.3
0.4
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
2.55
2.55
Conditions
2.7
( ) : 2SB885
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB
Ratings (
–)110 (
–)100 (
–)6 (
–)5 (
–)8 1.75 35 150
–55 to +150
Un.
2SD1195 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 2.5A ·Low Satura.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1190 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 2 | 2SD1190 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1191 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SD1191 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1192 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 6 | 2SD1192 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 7 | 2SD1193 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 8 | 2SD1193 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1193 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1194 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 11 | 2SD1194 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1194 |
INCHANGE |
NPN Transistor |
|