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·High DC current gain- : hFE = 2000 (Min) @ IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.
METER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VBE(sat)-1 Base-Emitter Saturation voltage IC= 3A; IB= 12mA VBE(sat)-2 Base-Emitter Saturation voltage IC= 5A; IB= 20mA ICEO Collector Cutoff current VCE= 80V; IB=0 ICBO Collector Cutoff current VCB= 80V; IE=0 IEBO Emitter Cut-off current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V MIN MAX UNIT 80 V 2.0 V 4.0 V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1000 |
NEC |
NPN TRANSISTOR |
|
| 2 | 2SD1000 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 3 | 2SD1001 |
NEC |
NPN TRANSISTOR |
|
| 4 | 2SD1001 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 5 | 2SD1005 |
GME |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2SD1005 |
HOTTECH |
GENERAL PURPOSE TRANSISTOR |
|
| 7 | 2SD1005 |
NEC |
NPN TRANSISTOR |
|
| 8 | 2SD1005 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 9 | 2SD1005 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 10 | 2SD1005-U |
MCC |
NPN Silicon Power Transistors |
|
| 11 | 2SD1005-V |
MCC |
NPN Silicon Power Transistors |
|
| 12 | 2SD1005-W |
MCC |
NPN Silicon Power Transistors |
|