2SC941TM - Toshiba Semiconductor

2SC941TM NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-ba.

Features

V, IC = 0 hFE VCE = 12 V, IC = 2 mA (Note) VCE (sat) VBE (sat) fT Cre Cc･rbb’ NF IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCE = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz, Rg = 50 W Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 80 120 ¾ MHz ¾ 2.2 3.0 pF ¾ 30 50 ps ¾ 2.0 3.5 dB 1 2003-03-24 Y Parameters (typ.) (common emitter VCE = 6 V, IE = -1 mA, f = 1 MHz) Characteristics Input conductance Input capacitance Output conductance Outp.