2SC829 - Panasonic Semiconductor

2SC829 NPN Transistor

Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter .

Features

• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.2 12.9±0.5 0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V 0.45+
  –00..115 0.45+
  –00..115 e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 30 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 2.5+
  –00..26 2.5+
  –00.