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·Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B.
ge IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-emitter saturation voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 2SC789 MIN TYP. MAX UNIT 70 V 5 V 1.0 V 1.5 V 100 μA 100 μA 40 240 15 3 MHz hFE-1 Classifications O R Y 40-80 70-140 120-240 NOTICE： ISC reserves the rights to make changes of the content herein the .
2SC789 - SavantIC
·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC781 |
ETC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SC782 |
ETC |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR |
|
| 3 | 2SC783 |
ETC |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR |
|
| 4 | 2SC784 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC785 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC787 |
ETC |
Silicon NPN Transistor |
|
| 7 | 2SC710 |
Mitsubishi |
Small Signal Transistor |
|
| 8 | 2SC717 |
ETC |
Silicon NPN Epitaxial Type Transistor |
|
| 9 | 2SC730 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC732 |
SEMTECH |
NPN Silicon Transistor |
|
| 11 | 2SC732TM |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SC733 |
ETC |
Transistor |
|