·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2169 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-E.
turation Voltage IC= 5A; IB= 250mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 250mA V(BR)CEO Collector-Emitter Voltage Breakdown IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V MIN TYP. MAX UNIT 0.36 V 1.4 V 50 V 6 V 10 μA 10 μA 200 700 60 pF 200 MHz isc website:www.iscsemi.com 2 isc & iscsemi is r.
www.DataSheet4U.com Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA216.
Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA ht.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC6010 |
Toshiba |
Silicon NPN Transistor | |
2 | 2SC6011 |
INCHANGE |
NPN Transistor | |
3 | 2SC6011 |
Allegro MicroSystems |
Audio Amplification Transistor | |
4 | 2SC6011 |
Sanken |
Audio Amplification Transistor | |
5 | 2SC6011A |
Sanken |
PNP PowerTransistor | |
6 | 2SC6011A |
Allegro MicroSystems |
Audio Amplification Transistor | |
7 | 2SC6011A |
INCHANGE |
NPN Transistor | |
8 | 2SC6012 |
Panasonic Semiconductor |
Silicon NPN triple diffusion Power Transistor | |
9 | 2SC6013 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
10 | 2SC6014 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
11 | 2SC6015 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
12 | 2SC6016 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |