To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, an.
• High gain bandwidth product fT = 20 GHz typ.
• High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
2 3 1 4
1. Emitter 2. Collector 3. Emitter 4. Base
Note: Marking is “WJ
–“.
2SC5894
Absolute Maximum Ratings
(Ta = 25 °C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 12 50 150
–55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Coll.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5890 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
2 | 2SC5890 |
Renesas Technology |
Silicon NPN Transistor | |
3 | 2SC5895 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5895 |
INCHANGE |
NPN Transistor | |
5 | 2SC5895 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC5896 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
7 | 2SC5899 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
9 | 2SC5801 |
NEC |
NPN TRANSISTOR | |
10 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors | |
11 | 2SC5802 |
INCHANGE |
NPN Transistor | |
12 | 2SC5803 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |