2SC5695 - Toshiba Semiconductor

2SC5695 Silicon NPN Transistor

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV · · · High voltage: VCBO = 1500 V Low saturation voltage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm www.DataSheet4U.com Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collec.

Features

Switching time Fall time Storage time Fall time VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) Test Condition VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A, IB1 (end) = 1.4 A, fH = 64 kHz ICP = 8 A, IB1 (end) = 1.1 A, fH = 100 kHz Weight: 9.75 g (typ.) Min ¾ ¾ 700 20 8 4.8 ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 1.0 2 280 2.5 0.15 1.6 Max 1 10 ¾ 50 17 8.3 3 1.5 ¾ ¾ 3 0.3 1.8 0.15 Unit mA mA V ¾ V V MHz p.