Transistors 2SC5580 Silicon NPN epitaxial planer type Unit: mm (0.425) For high-frequency oscillation / switching I Features • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.
• High transition frequency fT
• S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.3+0.1
–0.0 3
0.15+0.10
–0.05
1.25±0.10
2.1±0.1 5°
1
2
0.2±0.1 0 to 0.1 0.9±0.1 0.9+0.2
–0.1
(0.65) (0.65) 1.3±0.1 2.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 8 3 50 150 150 −55 to +150 Unit V V V mA mW.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5583 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5584 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5584 |
INCHANGE |
NPN Transistor | |
4 | 2SC5585 |
GME |
LOW FREQUENCY TRANSISTOR | |
5 | 2SC5585 |
Rohm |
NPN TRANSISTOR | |
6 | 2SC5585 |
Kexin |
Low Frequency Transistor | |
7 | 2SC5585 |
SeCoS |
NPN Transistor | |
8 | 2SC5585 |
Weitron |
NPN TRANSISTOR | |
9 | 2SC5585F |
SeCoS |
NPN Transistor | |
10 | 2SC5586 |
INCHANGE |
NPN Transistor | |
11 | 2SC5587 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5588 |
Toshiba Semiconductor |
NPN TRANSISTOR |