Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area 5˚ (.
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.7±0.1
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
e ) Collector-base voltage (Emitter open) VCBO
1 700
V
c type Collector-emitter voltage (E-B short) VCES
1 700
3.3±0.3
5.5±0.3
V
n d tage. ued Collector-emitter voltage (Base open) VCEO
600
(2.0)
V
l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC554 |
SeCoS |
NPN Transistor | |
2 | 2SC5540 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC5541 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC5543 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5544 |
Renesas |
Silicon NPN Transistor | |
6 | 2SC5544 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5545 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5548 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5548 |
INCHANGE |
NPN Transistor | |
10 | 2SC5548A |
INCHANGE |
NPN Transistor | |
11 | 2SC5548A |
Toshiba Semiconductor |
NPN Transistor | |
12 | 2SC5549 |
Toshiba Semiconductor |
NPN TRANSISTOR |