2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-577 B (Z) 3rd. Edition September 1997 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at f H = 64 kHz • Isolated package TO–3PFM Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5448 Absolute Maximum Ratings (T.
• High breakdown voltage VCBO = 1500 V
• High speed switching tf = 0.15 µsec (typ.) at f H = 64 kHz
• Isolated package TO
–3PFM
Outline
TO
–3PFM
1
2 3
1. Base 2. Collector 3. Emitter
2SC5448
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg
Note1
Ratings 1500 700 6 10 20 50 150
–55 to +150
Unit V V V A A W °C °C
Electrical Characteristic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5440 |
Panasonic Semiconductor |
NPN Transistor | |
2 | 2SC5442 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
3 | 2SC5442A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
4 | 2SC5443 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
5 | 2SC5444 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC5445 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5446 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5447 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5449 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5449 |
INCHANGE |
NPN Transistor | |
11 | 2SC5404 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5404 |
SavantIC |
SILICON POWER TRANSISTOR |