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2SC5218 - Hitachi Semiconductor

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2SC5218 NPN TRANSISTOR

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volt.

Features


• High gain bandwidth product fT = 9 GHz typ
• High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YK
  –”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150
  –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recom.

The same part from a different manufacturer

Datasheet 2SC5218 - Inchange Semiconductor 2SC5218

·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 M.

Datasheet 2SC5218 - Renesas 2SC5218

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, .

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