2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base volt.
• High gain bandwidth product fT = 9 GHz typ
• High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5218
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YK
–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150
–55 to +150 Unit V V V mA mW °C °C
Attention: This device is very sensitive to electro static discharge. It is recom.
·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 M.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5210 |
Isahaya Electronics |
Silicon NPN Triple Diffused Type Transistor | |
2 | 2SC5211 |
Kexin |
Small Signal Transistor | |
3 | 2SC5212 |
Isahaya Electronics |
Silicon NPN Epitaxial Type Transistor | |
4 | 2SC5212 |
Kexin |
Small Signal Transistor | |
5 | 2SC5213 |
ETC |
NPN Transistor | |
6 | 2SC5214 |
ETC |
Silicon NPN Epitaxial Type Transistor | |
7 | 2SC5214 |
Kexin |
Small Signal Transistor | |
8 | 2SC5216 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5219 |
Hitachi |
Silicon NPN Triple Diffused Planar Transistor | |
10 | 2SC521A |
Toshiba |
SILICON NPN TRANSISTOR | |
11 | 2SC521A |
ETC |
Silicon NPN Triple Diffused Mesa Transistor | |
12 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |