2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collec.
• High gain bandwidth product fT = 13.5 GHz Typ
• High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK
–4
2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter
2SC5081
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150
–55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC508 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC508 |
INCHANGE |
NPN Transistor | |
3 | 2SC5080 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5084 |
Toshiba Semiconductor |
NPN Transistor | |
5 | 2SC5084 |
Inchange Semiconductor |
Silicon NPN Transistor | |
6 | 2SC5085 |
Toshiba Semiconductor |
NPN Transistor | |
7 | 2SC5086 |
Toshiba Semiconductor |
NPN Transistor | |
8 | 2SC5086 |
Inchange Semiconductor |
Silicon NPN Transistor | |
9 | 2SC5086FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5087 |
Toshiba Semiconductor |
NPN Transistor | |
11 | 2SC5088 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5089 |
Toshiba Semiconductor |
NPN TRANSISTOR |