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SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Transistors Features Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collec.
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 80 5 1 1.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Paramete.
2SC5026 - Panasonic Semiconductor
Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5021 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5022 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5022 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC5023 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 5 | 2SC5024 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 6 | 2SC5025 |
Hitachi |
Silicon NPN Transistor |
|
| 7 | 2SC5026G |
Panasonic |
Silicon NPN Transistor |
|
| 8 | 2SC5027 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5027 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC5027 |
UTC |
NPN SILICON TRANSISTOR |
|
| 11 | 2SC5027 |
Nell |
Silicon NPN Transistor |
|
| 12 | 2SC5027 |
LZG |
SILICON NPN TRANSISTOR |
|