2SC5018 - Panasonic Semiconductor

2SC5018 NPN TRANSISTOR

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base volta.

Features

q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* (Ta=25˚C) Ratings 500 400 7 1.5 0.8 1 150
  –55 ~ +150 1cm2 Unit 0.45
  –0.05 0.45
  –0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC
* Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+
  – 0.05 Note: In addition to the lead type shown in the upper .