·With TO-220F package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base .
ation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2.5A; IB=0.125A IC=2.5A; IB=0.125A VCB=50V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=2.5A ; VCE=1V IC=1A ; VCE=4V IE=0; f=1MHz;VCB=10V 100 60 100 45 MHz pF MIN 50 0.4 1.3 1 1 320 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton ts tf Turn-on time Storage time Fall time IC=2.5A IB1=-IB2=0.125A VCC=30V ,RL=12@ Duty cycleA1% 0.1 0.8 0.1 µs µs µs 2 www.datasheet4u.com Sava.
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm • Low satur.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4880 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC4880 |
INCHANGE |
NPN Transistor | |
3 | 2SC4883 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC4883 |
INCHANGE |
NPN Transistor | |
5 | 2SC4883 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC4883A |
INCHANGE |
NPN Transistor | |
7 | 2SC4883A |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC4883A |
Sanken |
NPN TRANSISTOR | |
9 | 2SC4884 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC4885 |
NEC |
NPN TRANSISTOR | |
11 | 2SC4886 |
Sanken electric |
NPN TRANSISTOR | |
12 | 2SC4886 |
SavantIC |
SILICON POWER TRANSISTOR |