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Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automati.
· Large current capacity (IC=2A).
· High breakdown voltage (VCEO≥400V).
· Possible to offer the 2SA1830/2SC4734 devices in a
tape reel packaging, which facilitates automatic
insertion.
Package Dimensions
unit:mm 2084A
[2SA1830/2SC4734]
( ) : 2SA1830
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4730 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC4731 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC4732 |
Sanyo |
Epitaxial planar type silicon transistor |
|
| 4 | 2SC4735 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC4736 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC4737 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC4738 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SC4738 |
SeCoS |
NPN Transistor |
|
| 9 | 2SC4738F |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC4702 |
Renesas |
NPN Transistor |
|
| 12 | 2SC4702 |
Kexin |
NPN Transistor |
|