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Ordering number:EN3520 Features · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maxi.
· Adoption of MBIT process.
· High breakdown voltage (VCEO≥400V).
· Excellent linearity of hFE.
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
2SA1784/2SC4644
High Voltage Driver Applications
Package Dimensions
unit:mm 2064
[2SA17814/2SC4644]
( ) : 2SA1784
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrica.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4640 |
Sanyo |
Silicon Transistor |
|
| 2 | 2SC4641 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 3 | 2SC4641 |
Sanyo |
Transistor |
|
| 4 | 2SC4643 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC4645 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SC4646 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 7 | 2SC4647 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC460 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC460 |
Renesas |
Silicon NPN epitaxial planar type Transistor |
|
| 10 | 2SC4600 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC4600 |
Kexin |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC4601 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|