2SC4630LS - Sanyo Semicon Device

2SC4630LS NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • • Package Dimensions unit : mm 2079D [2SC4630LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=2.8pF). Full isolation package. High reliability.

Features

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• Package Dimensions unit : mm 2079D [2SC4630LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=2.8pF). Full isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : E.