2SC4517 - INCHANGE

2SC4517 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V.

Features

ollector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.25A; VCE= 12V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 1A; IB1= 0.15A; IB2= -0.45A; VCC= 250V; RL= 250Ω MIN TYP. MAX UNIT 550 V 0.5 V 1.2 V 100 μA 100 .