2SC4385 - INCHANGE

2SC4385 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1670 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

Features

reakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A, RL= 10Ω, IB1= -IB2= 0.3A, VCC= 30V MIN TYP. MAX UNIT 80 V 1.5 V 10 μA 10 μA 50 20 MHz 0.5 μs 2.5 μs 0.6 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without not.