2SC4183 - NEC

2SC4183 NPN SILICON EPITAXIAL TRANSISTOR

The 2SC4183 is specifically designed for UHF RF amplifier applications. The 2SC4183 features high gain, low noise, and excellent forward AGC characteristics in tiny plastic super mini mold package makes it suitable for use in small type equipments such as Hybrid Integrated Circuit and other applications. 2.0 ± 0.2 0.3 +0.1 –0 PACKAGE DIMENSIONS in millimete.

Features

high gain, low noise, and excellent forward AGC characteristics in tiny plastic super mini mold package makes it suitable for use in small type equipments such as Hybrid Integrated Circuit and other applications. 2.0 ± 0.2 0.3 +0.1
  –0 PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES
• Low NF and high Gpb NF = 3.0 dB Typ. Gpb = 10 dB Typ. (f = 900 MHz)
• Foward AGC characteristics. 0.65 0.65 2 0.3 +0.1
  –0 0.15 +0.1
  –0.05 Test Conditions 1 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current T.