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PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie 20.0±0.5Product lifecyclennuaen 2.5 Solder Dip Power Transistors 2SC4111 Silicon NPN triple diffusion planar type For horizontal deflectio.
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 700
7 22 10 3.5 150 3.5
Junction temperature Storage temperature
Tj 150 Tstg
–55 to +150
Unit V V V V A A A
W
˚C ˚C
s Electrical Characteris.
2SC4111 - SavantIC
·With TO-3PL package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection outp.
2SC4111 - INCHANGE
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Min.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4110 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC4110 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC4110B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC4112 |
ETC |
Transistor |
|
| 6 | 2SC4113 |
Sanyo |
Silicon Transistor |
|
| 7 | 2SC4115 |
GME |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC4115 |
Jiangsu |
Transistor |
|
| 9 | 2SC4115 |
Kexin |
Transistor |
|
| 10 | 2SC4115 |
JinYu |
NPN Transistor |
|
| 11 | 2SC4115 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 12 | 2SC4115 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|