2SC3936 - Panasonic Semiconductor

2SC3936 Silicon NPN Transistor

Transistors 2SC3936 Silicon NPN epitaxial planar type For high-frequency amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 • Optimum for RF amplification, oscillation, mixing, and IF of 1.25±0.10 2.1±0.1 5˚ FM/AM radios • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing .

Features

3
• Optimum for RF amplification, oscillation, mixing, and IF of 1.25±0.10 2.1±0.1 5˚ FM/AM radios
• S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) /
■ Absolute Maximum Ratings Ta = 25°C 1.3±0.1 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 0.9±0.1 0.9
  –+00..12 V a e cle con Collector current IC 30 mA lifecy , dis Collect.