Transistors 2SC3934 Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 .
3
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
0.15+
–00..0150
1.25±0.10 2.1±0.1 5˚
automatic insertion through the tape packing and the magazine packing
1
2
(0.65) (0.65)
1.3±0.1
/
■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
0.2±0.1
V
c e. d ty Collector-emitter voltage (Base open) VCEO
12
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2.5
0 to 0.1 0.9±0.1 0.9
–+00..12
V
a e cle con Collector current
IC
30
mA
lifecy , dis Pe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3930 |
GME |
NPN Silicon Transistor | |
2 | 2SC3930 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3930 |
Kexin |
Silicon NPN Transistor | |
4 | 2SC3930 |
SeCoS |
NPN Silicon Transistor | |
5 | 2SC3930 |
Jin Yu Semiconductor |
TRANSISTOR | |
6 | 2SC3930G |
Panasonic |
Silicon NPN Transistor | |
7 | 2SC3930W |
Galaxy Semi-Conductor |
NPN Silicon Transistor | |
8 | 2SC3931 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
9 | 2SC3931G |
Panasonic |
Silicon NPN Transistor | |
10 | 2SC3932 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3932G |
Panasonic |
Silicon NPN Transistor | |
12 | 2SC3933 |
Panasonic |
Silicon NPN Transistor |