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2SC3875 - Elite

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2SC3875 NPN Epitaxial Silicon Transistor

2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storag.

Features

B= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.2 µA 0.1 µA 70 700 0.25 V 1V 80 MHz hFE CLASSIFICATION Classification G hFE 70-140 Y 120-240 GR 200-400 BL 350-700 Device Marking 2SC3875-G=ALO ; 2SC3875-Y=ALY ; 2SC3875-GR=ALG ; 2SC3875-G=ALL Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Part No. : 2SC3875 Page: 1 / 1 .

The same part from a different manufacturer

Datasheet 2SC3875 - SEMTECH 2SC3875

ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdiv.

Datasheet 2SC3875 - Bluecolour 2SC3875

2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivide.

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