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·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in TV horizontal output and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base .
or-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 1.0 V 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 uA hFE DC Current Gain IC= 5A; VCE= 5V 10 40 fT Current-Gain—Bandwidth Product IE= 1A ; VCE= 10V 32 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 100 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the appli.
2SC3842 - SavantIC
·With TO-3PML package ·High voltage ,high speed ·High current capability APPLICATIONS ·For use in TV horizontal output a.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3840 |
NEC |
NPN SILICON POWER TRANSISTOR |
|
| 2 | 2SC3840 |
Renesas Technology |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3841 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SC3841 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3841 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SC3843 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3846 |
Fujitsu |
Silicon High Speed Power Transistor |
|
| 8 | 2SC3847 |
Fujitsu |
Silicon High Speed Power Transistor |
|
| 9 | 2SC380 |
HAOCHANG |
NPN Transistor |
|
| 10 | 2SC380 |
SEMTECH |
NPN Transistor |
|
| 11 | 2SC3802K |
Rohm |
Epitaxial Planar NPN Silicon Transistor |
|
| 12 | 2SC3803 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|