·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Volt.
400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which cou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3650 |
GME |
General-Purpose Amplifier | |
2 | 2SC3650 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
3 | 2SC3650 |
Kexin |
Transistor | |
4 | 2SC3650 |
SeCoS |
NPN Silicon Epitaxial Planar Transistor | |
5 | 2SC3650 |
Jin Yu Semiconductor |
Transistor | |
6 | 2SC3650 |
WEJ |
NPN Transistor | |
7 | 2SC3651 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC3651 |
Kexin |
Transistor | |
9 | 2SC3652 |
Hitachi Semiconductor |
SILICON NPN EPITAXIAL TRANSISTOR | |
10 | 2SC3653 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | 2SC3654 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
12 | 2SC3656 |
Sanyo |
PNP/NPN Silicon Transistor |