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2SC3657 - Inchange Semiconductor
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations fo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3650 |
GME |
General-Purpose Amplifier |
|
| 2 | 2SC3650 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3650 |
Kexin |
Transistor |
|
| 4 | 2SC3650 |
SeCoS |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC3650 |
Jin Yu Semiconductor |
Transistor |
|
| 6 | 2SC3650 |
WEJ |
NPN Transistor |
|
| 7 | 2SC3651 |
Sanyo Semicon Device |
NPN Transistor |
|
| 8 | 2SC3651 |
Kexin |
Transistor |
|
| 9 | 2SC3652 |
Hitachi Semiconductor |
SILICON NPN EPITAXIAL TRANSISTOR |
|
| 10 | 2SC3653 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 11 | 2SC3654 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SC3656 |
Sanyo |
PNP/NPN Silicon Transistor |
|