Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SMD Type NPN Silicon Epitaxia 2SC3617 Transistors Features World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty .
World standard miniature package. High hFE hFE=800 to 1600.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)
* Total power dissipation Junction temperature Storage temperature
* PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 50 50 15 300 500 2.0 150 -55 to +150 Unit V V V mA mA W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain
* Collector-emitter saturation voltage
* Base-emitter saturation voltage
* Ga.
2SC3617 - NEC
of circuits, software and other related information in this document are provided for illustrative purposes in semicond.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3611 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3613 |
Toshiba Semiconductor |
NPN Transistor |
|
| 3 | 2SC3615 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC3616 |
NEC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SC3618 |
NEC |
NPN Transistor |
|
| 6 | 2SC3618 |
Kexin |
Transistor |
|
| 7 | 2SC3619 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SC3619 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC3619 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|