2SC3462 - Inchange Semiconductor

2SC3462 Power Transistor

·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Colle.

Features

Sustaining Voltage Collector-Base Breakdown Voltage IC= 5mA; RBE= ∞ IC= 2A; IB1= -IB2= 0.4A; L= 2mH; clamped IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.3A; VCE= 5V hFE-2 DC Current Gain IC= 1.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V S.