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SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3361 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collec.
+0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 5 150 400 40 150 125 -55 to +125 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.da.
2SC3361 - Sanyo Semicon Device
Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3360 |
NEC |
NPN Silicon Transistor |
|
| 2 | 2SC3360 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 3 | 2SC3365 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3365 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3365 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3365 |
Renesas |
Silicon NPN Transistor |
|
| 7 | 2SC3369 |
National Semiconductor |
Si NPN Epitaxial Planar Transistor |
|
| 8 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|