2SC3195 - PACO

2SC3195 NPN Silicon Epitaxial Planar Transistor

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE 10 VGS - Gate-to-Source Voltage (V) 16 RDS(on) - On-.

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 29 5.4 VGS = 4.5V VGS = 10V 1.9 6.5 4.7 UNIT V nC nC mΩ mΩ V
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• 2 ORDERING INFORMATION APPLICATIONS
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